DHS043N07P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHS043N07P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.84 nS

Cossⓘ - Capacitancia de salida: 637 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: DFN5X6-8L

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DHS043N07P datasheet

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DHS043N07P

DHS043N07P 100A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast

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DHS043N07P

DHS043N85P 112A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.8m DS(on) (TYP) the RoHS standard. 1 3 S I =112A D 2 Features Fast switching Low on resistance Low ga

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 dhs044n12 dhs044n12e.pdf pdf_icon

DHS043N07P

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge

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DHS043N07P

DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat

MOSTRAR MÁS

Otros transistores... F18N50, F18N65, F20N50, F20N60, F25N10, DHS042N15, DHS042N15E, DHS042N85P, AOD4184A, DHS043N85P, DHS044N12, DHS044N12E, DHS044N12U, DHS045N85, DHS045N85B, DHS045N85D, DHS045N85E