DHS043N07P Datasheet. Specs and Replacement
Type Designator: DHS043N07P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.84 nS
Cossⓘ - Output Capacitance: 637 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DFN5X6-8L
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DHS043N07P substitution
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DHS043N07P datasheet
dhs043n07p.pdf
DHS043N07P 100A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast... See More ⇒
dhs043n85p.pdf
DHS043N85P 112A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.8m DS(on) (TYP) the RoHS standard. 1 3 S I =112A D 2 Features Fast switching Low on resistance Low ga... See More ⇒
dhs044n12 dhs044n12e.pdf
DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒
dhs044n12.pdf
DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat... See More ⇒
Detailed specifications: F18N50, F18N65, F20N50, F20N60, F25N10, DHS042N15, DHS042N15E, DHS042N85P, AOD4184A, DHS043N85P, DHS044N12, DHS044N12E, DHS044N12U, DHS045N85, DHS045N85B, DHS045N85D, DHS045N85E
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