DHS044N12 Todos los transistores

 

DHS044N12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS044N12
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 272 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 1023 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO220
 

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DHS044N12 Datasheet (PDF)

 ..1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS044N12

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 ..2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS044N12

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

 0.1. Size:961K  cn wxdh
 dhs044n12u.pdf pdf_icon

DHS044N12

DHS044N12U270A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.7mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI = 270AD2 Features Low on resistance Low gate

 9.1. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS044N12

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

MOSTRAR MÁS

Otros transistores... F20N50 , F20N60 , F25N10 , DHS042N15 , DHS042N15E , DHS042N85P , DHS043N07P , DHS043N85P , AO4468 , DHS044N12E , DHS044N12U , DHS045N85 , DHS045N85B , DHS045N85D , DHS045N85E , DHS045N85F , DHS045N85I .

 

 
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