DHS044N12 MOSFET: N-Ch, 120V, 160A. Full specification with pinout and replacement list

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dhs044n12 dhs044n12e.pdf pdf_icon

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒

..2. Size:819K cn wxdh
dhs044n12.pdf pdf_icon

DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat... See More ⇒

0.1. Size:961K cn wxdh
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DHS044N12U 270A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 270A D 2 Features Low on resistance Low gate... See More ⇒

9.1. Size:1350K cn wxdh
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DHS045N88/DHS045N88F/DHS045N88I/ DHS045N88E/DHS045N88B/DHS045N88D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

9.2. Size:1390K cn wxdh
dhs046n10 dhs046n10f dhs046n10i dhs046n10e dhs046n10b dhs046n10d.pdf pdf_icon

DHS046N10/DHS046N10F/DHS046N10I DHS046N10E/DHS046N10B/DHS046N10D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒

9.3. Size:1350K cn wxdh
dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf pdf_icon

DHS045N85/DHS045N85F/DHS045N85I/ DHS045N85E/DHS045N85B/DHS045N85D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

9.4. Size:698K cn wxdh
dhs043n85p.pdf pdf_icon

DHS043N85P 112A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.8m DS(on) (TYP) the RoHS standard. 1 3 S I =112A D 2 Features Fast switching Low on resistance Low ga... See More ⇒

9.5. Size:1370K cn wxdh
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DHS045N98/DHS045N98F/DHS045N98I/ DHS045N98E/DHS045N98B/DHS045N98D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

9.6. Size:964K cn wxdh
dhs042n15 dhs042n15e.pdf pdf_icon

DHS042N15&DHS042N15E 150A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 150V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 5.0m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 4.8m TO-263 DS(on) (TYP) 3 S ... See More ⇒

9.7. Size:813K cn wxdh
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DHS043N07P 100A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast... See More ⇒

9.8. Size:792K cn wxdh
dhs042n85p.pdf pdf_icon

DHS042N85P 108A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 108A D 2 Features Fast switching Low on resistance Low g... See More ⇒

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