DSP037N08N3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DSP037N08N3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 735 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm

Encapsulados: DFN5X6-8L

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DSP037N08N3 datasheet

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DSP037N08N3

DSP037N08N3 80V/3.4m /100A N-MOSFET Features Key Parameters VDS Low on resistance 80V RDS(on)typ. Low reverse transfer capacitances 3.4m 100% single pulse avalanche energy test VTH 3V ID(Silicon limit ) 100% VDS test 133A ID(Package limit ) Pb-Free plating / Halogen-Free / RoHS compliant 100A Ciss@10V 3402pF Qgd 21nC Applications Power switching ap

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DSP037N08N3

DSP038N08NA 130A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.2m DS(on) (TYP) the RoHS standard. 1 3 S I =130A D 2 Features Fast switching Low on resistance Low g

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DSP037N08N3

DSP032N08NA 170A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.4m DS(on) (TYP) the RoHS standard. 1 3 S I =170A D 2 Features AEC-Q101 qualified Fast switching Low o

Otros transistores... DHS045N85D, DHS045N85E, DHS045N85F, DHS045N85I, DHS045N88, DHS045N88B, DSP018N04LA, DSP032N08NA, IRFZ44, DSP038N08NA, DSP051N10N, DSP060N04LA, DSP070N10L3A, DSU007N04NA, DSU011N08N3A, DSU021N10NA, DSU023N10N3