DSP037N08N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DSP037N08N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29 nS
Cossⓘ - Capacitancia de salida: 735 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: DFN5X6-8L
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DSP037N08N3 Datasheet (PDF)
dsp037n08n3.pdf
DSP037N08N3 80V/3.4m/100A N-MOSFET Features Key ParametersVDS Low on resistance 80VRDS(on)typ. Low reverse transfer capacitances 3.4m 100% single pulse avalanche energy test VTH 3VID(Silicon limit ) 100% VDS test 133AID(Package limit ) Pb-Free plating / Halogen-Free / RoHS compliant 100ACiss@10V3402pFQgd 21nCApplications Power switching ap
dsp038n08na.pdf
DSP038N08NA130A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.2mDS(on) (TYP)the RoHS standard.13 SI =130AD2 Features Fast switching Low on resistance Low g
dsp032n08na.pdf
DSP032N08NA170A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.4mDS(on) (TYP)the RoHS standard.13 SI =170AD2 Features AEC-Q101 qualified Fast switching Low o
Otros transistores... DHS045N85D , DHS045N85E , DHS045N85F , DHS045N85I , DHS045N88 , DHS045N88B , DSP018N04LA , DSP032N08NA , IRF640 , DSP038N08NA , DSP051N10N , DSP060N04LA , DSP070N10L3A , DSU007N04NA , DSU011N08N3A , DSU021N10NA , DSU023N10N3 .
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