FQU4N50TUWS Todos los transistores

 

FQU4N50TUWS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQU4N50TUWS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.7 Ohm

Encapsulados: TO251 IPAK

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FQU4N50TUWS datasheet

 7.1. Size:844K  fairchild semi
 fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf pdf_icon

FQU4N50TUWS

January 2009 QFET FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especiall

 9.1. Size:722K  fairchild semi
 fqd4n25 fqu4n25.pdf pdf_icon

FQU4N50TUWS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology

 9.2. Size:717K  fairchild semi
 fqd4n25tf fqd4n25tm fqu4n25tu.pdf pdf_icon

FQU4N50TUWS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology

 9.3. Size:819K  fairchild semi
 fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf pdf_icon

FQU4N50TUWS

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especial

MOSTRAR MÁS

Otros transistores... FQU1N60C, FDP085N10A, FQU20N06L, FQU2N100, FQU2N60C, FDMC8030, FQU2N90TUAM002, FQU3N50C, IRFB4115, FQU5N40, FDMC7582, FQU5N60C, FDMQ8403, FQU5P20, FQU8P10, FQU9N25, HUF75542P3

 

 

 

 

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