All MOSFET. FQU4N50TUWS Datasheet

 

FQU4N50TUWS MOSFET. Datasheet pdf. Equivalent


   Type Designator: FQU4N50TUWS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO251 IPAK

 FQU4N50TUWS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU4N50TUWS Datasheet (PDF)

 7.1. Size:844K  fairchild semi
 fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf

FQU4N50TUWS FQU4N50TUWS

January 2009QFETFQD4N50 / FQU4N50500V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especiall

 9.1. Size:722K  fairchild semi
 fqd4n25 fqu4n25.pdf

FQU4N50TUWS FQU4N50TUWS

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.2. Size:717K  fairchild semi
 fqd4n25tf fqd4n25tm fqu4n25tu.pdf

FQU4N50TUWS FQU4N50TUWS

May 2000TMQFETQFETQFETQFETFQD4N25 / FQU4N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC)planar stripe, DMOS technology. Low Crss ( typical 4.8 pF)This advanced technology

 9.3. Size:819K  fairchild semi
 fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf

FQU4N50TUWS FQU4N50TUWS

January 2009QFETFQD4N20 / FQU4N20200V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 5.0 pF)This advanced technology has been especial

Datasheet: FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C , IRF630 , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 .

 

 
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