All MOSFET. FQU4N50TU_WS Datasheet

 

FQU4N50TU_WS MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU4N50TU_WS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Maximum Drain-Source On-State Resistance (Rds): 2.7 Ohm

Package: TO251_IPAK

FQU4N50TU_WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU4N50TU_WS Datasheet (PDF)

3.1. fqd4n50 fqu4n50.pdf Size:844K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

January 2009 QFET® FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.6A, 500V, RDS(on) = 2.7? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to

5.1. fqd4n20 fqu4n20.pdf Size:819K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

January 2009 QFET® FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to

5.2. fqu4n25tu.pdf Size:717K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

 5.3. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology has been espe

5.4. fqu4n20tu.pdf Size:819K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

January 2009 QFET® FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especial

Datasheet: FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , FQU3N50C , IRFP450 , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 .

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