FQU4N50TUWS PDF and Equivalents Search

 

FQU4N50TUWS PDF Specs and Replacement


   Type Designator: FQU4N50TUWS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO251 IPAK
 

 FQU4N50TUWS substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQU4N50TUWS PDF Specs

 7.1. Size:844K  fairchild semi
fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf pdf_icon

FQU4N50TUWS

January 2009 QFET FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especiall... See More ⇒

 9.1. Size:722K  fairchild semi
fqd4n25 fqu4n25.pdf pdf_icon

FQU4N50TUWS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 9.2. Size:717K  fairchild semi
fqd4n25tf fqd4n25tm fqu4n25tu.pdf pdf_icon

FQU4N50TUWS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 9.3. Size:819K  fairchild semi
fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf pdf_icon

FQU4N50TUWS

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especial... See More ⇒

Detailed specifications: FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C , IRFB4115 , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 .

History: JMSH1509AE

Keywords - FQU4N50TUWS MOSFET specs

 FQU4N50TUWS cross reference
 FQU4N50TUWS equivalent finder
 FQU4N50TUWS pdf lookup
 FQU4N50TUWS substitution
 FQU4N50TUWS replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


 
.