FQU4N50TUWS Datasheet. Specs and Replacement

Type Designator: FQU4N50TUWS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO251 IPAK

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FQU4N50TUWS datasheet

 7.1. Size:844K  fairchild semi
 fqd4n50tf fqd4n50tm fqd4n50 fqu4n50.pdf pdf_icon

FQU4N50TUWS

January 2009 QFET FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especiall... See More ⇒

 9.1. Size:722K  fairchild semi
 fqd4n25 fqu4n25.pdf pdf_icon

FQU4N50TUWS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 9.2. Size:717K  fairchild semi
 fqd4n25tf fqd4n25tm fqu4n25tu.pdf pdf_icon

FQU4N50TUWS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology ... See More ⇒

 9.3. Size:819K  fairchild semi
 fqd4n20tf fqd4n20 fqu4n20 fqu4n20tu.pdf pdf_icon

FQU4N50TUWS

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especial... See More ⇒

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Detailed specifications: FQU1N60C, FDP085N10A, FQU20N06L, FQU2N100, FQU2N60C, FDMC8030, FQU2N90TUAM002, FQU3N50C, IRFB4115, FQU5N40, FDMC7582, FQU5N60C, FDMQ8403, FQU5P20, FQU8P10, FQU9N25, HUF75542P3

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