All MOSFET. FQU4N50TU_WS Datasheet

 

FQU4N50TU_WS MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU4N50TU_WS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Maximum Drain-Source On-State Resistance (Rds): 2.7 Ohm

Package: TO251, IPAK

FQU4N50TU_WS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU4N50TU_WS Datasheet (PDF)

3.1. fqd4n50 fqu4n50.pdf Size:844K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

January 2009 QFET FQD4N50 / FQU4N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.6A, 500V, RDS(on) = 2.7? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to

5.1. fqu4n25tu.pdf Size:717K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 250V, RDS(on) = 1.75Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.8 pF) This advanced technology

5.2. fqu4n20tu.pdf Size:819K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

January 2009 QFET® FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.0A, 200V, RDS(on) = 1.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.0 pF) This advanced technology has been especial

 5.3. fqd4n20 fqu4n20.pdf Size:819K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

January 2009 QFET FQD4N20 / FQU4N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 200V, RDS(on) = 1.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC) planar stripe, DMOS technology. Low Crss ( typical 5.0 pF) This advanced technology has been especially tailored to

5.4. fqd4n25 fqu4n25.pdf Size:722K _fairchild_semi

FQU4N50TU_WS
FQU4N50TU_WS

May 2000 TM QFET QFET QFET QFET FQD4N25 / FQU4N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.0A, 250V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.3 nC) planar stripe, DMOS technology. Low Crss ( typical 4.8 pF) This advanced technology has been espe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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