DSP038N08NA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DSP038N08NA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 107 nS
Cossⓘ - Capacitancia de salida: 701 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de DSP038N08NA MOSFET
DSP038N08NA Datasheet (PDF)
dsp038n08na.pdf

DSP038N08NA130A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.2mDS(on) (TYP)the RoHS standard.13 SI =130AD2 Features Fast switching Low on resistance Low g
dsp037n08n3.pdf

DSP037N08N3 80V/3.4m/100A N-MOSFET Features Key ParametersVDS Low on resistance 80VRDS(on)typ. Low reverse transfer capacitances 3.4m 100% single pulse avalanche energy test VTH 3VID(Silicon limit ) 100% VDS test 133AID(Package limit ) Pb-Free plating / Halogen-Free / RoHS compliant 100ACiss@10V3402pFQgd 21nCApplications Power switching ap
dsp032n08na.pdf

DSP032N08NA170A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.4mDS(on) (TYP)the RoHS standard.13 SI =170AD2 Features AEC-Q101 qualified Fast switching Low o
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DSU011N08N3A | DHS035N88E | DSU021N10NA | DSG054N10N3 | DSG028N10NA | DSP032N08NA
History: DSU011N08N3A | DHS035N88E | DSU021N10NA | DSG054N10N3 | DSG028N10NA | DSP032N08NA



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHS052N10B | DHS052N10 | DHS051N10P | DHS046N10I | DHS046N10F | DHS046N10E | DHS046N10D | DHS046N10B | DHS046N10 | DHS030N88I | DHS030N88F | DHS030N88E | DHS030N88 | DHS025N88I | DHS025N88F | DHS025N88E
Popular searches
irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m