DSP038N08NA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DSP038N08NA 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 107 nS
Cossⓘ - Capacitancia de salida: 701 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Encapsulados: DFN5X6-8L
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DSP038N08NA datasheet
dsp038n08na.pdf
DSP038N08NA 130A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.2m DS(on) (TYP) the RoHS standard. 1 3 S I =130A D 2 Features Fast switching Low on resistance Low g
dsp037n08n3.pdf
DSP037N08N3 80V/3.4m /100A N-MOSFET Features Key Parameters VDS Low on resistance 80V RDS(on)typ. Low reverse transfer capacitances 3.4m 100% single pulse avalanche energy test VTH 3V ID(Silicon limit ) 100% VDS test 133A ID(Package limit ) Pb-Free plating / Halogen-Free / RoHS compliant 100A Ciss@10V 3402pF Qgd 21nC Applications Power switching ap
dsp032n08na.pdf
DSP032N08NA 170A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.4m DS(on) (TYP) the RoHS standard. 1 3 S I =170A D 2 Features AEC-Q101 qualified Fast switching Low o
Otros transistores... DHS045N85E, DHS045N85F, DHS045N85I, DHS045N88, DHS045N88B, DSP018N04LA, DSP032N08NA, DSP037N08N3, IRF640, DSP051N10N, DSP060N04LA, DSP070N10L3A, DSU007N04NA, DSU011N08N3A, DSU021N10NA, DSU023N10N3, DSU024N10N3A
History: AP4N2R6P | DHI50N15 | PSMN3R5-25MLD
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