All MOSFET. DSP038N08NA Datasheet

 

DSP038N08NA Datasheet and Replacement


   Type Designator: DSP038N08NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 78 nC
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 701 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: DFN5X6-8L
 

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DSP038N08NA Datasheet (PDF)

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DSP038N08NA

DSP038N08NA130A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.2mDS(on) (TYP)the RoHS standard.13 SI =130AD2 Features Fast switching Low on resistance Low g

 9.1. Size:1447K  cn wxdh
 dsp037n08n3.pdf pdf_icon

DSP038N08NA

DSP037N08N3 80V/3.4m/100A N-MOSFET Features Key ParametersVDS Low on resistance 80VRDS(on)typ. Low reverse transfer capacitances 3.4m 100% single pulse avalanche energy test VTH 3VID(Silicon limit ) 100% VDS test 133AID(Package limit ) Pb-Free plating / Halogen-Free / RoHS compliant 100ACiss@10V3402pFQgd 21nCApplications Power switching ap

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 dsp032n08na.pdf pdf_icon

DSP038N08NA

DSP032N08NA170A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.4mDS(on) (TYP)the RoHS standard.13 SI =170AD2 Features AEC-Q101 qualified Fast switching Low o

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