DSG045N14N Todos los transistores

 

DSG045N14N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DSG045N14N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 135 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO220
 

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DSG045N14N Datasheet (PDF)

 ..1. Size:1037K  cn wxdh
 dse043n14n dsg045n14n.pdf pdf_icon

DSG045N14N

DSE043N14N&DSG045N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI

 9.1. Size:1084K  cn wxdh
 dsg047n08n3 dse047n08n3.pdf pdf_icon

DSG045N14N

DSG047N08N3&DSE047N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 3.9mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 3.7mT0-263DS(on) (TYP)13 SI = 120AD2 F

 9.2. Size:835K  cn wxdh
 dsg048n08n3.pdf pdf_icon

DSG045N14N

DSG048N08N3120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Features Fast switching Low on resistance Low g

 9.3. Size:901K  cn wxdh
 dsg041n08na.pdf pdf_icon

DSG045N14N

DSG041N08NA180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.4mDS(on) (TYP)the RoHS standard.13 SI = 180AD2 Features Fast switching Low on resistance Low g

MOSTRAR MÁS

Otros transistores... DHS045N98B , DHS045N98D , DHS045N98E , DHS045N98F , DHS045N98I , DSG028N10NA , DSG030N10N3 , DSG041N08NA , IRFB3607 , DSG047N08N3 , DSG048N08N3 , DSG052N14N , DSG053N08N3 , DSG054N10N3 , DSG059N15NA , DSG070N10L3 , DSG070N15NA .

 

 
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