DSG045N14N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DSG045N14N  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 135 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO220

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DSG045N14N datasheet

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 dse043n14n dsg045n14n.pdf pdf_icon

DSG045N14N

DSE043N14N&DSG045N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I

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 dsg047n08n3 dse047n08n3.pdf pdf_icon

DSG045N14N

DSG047N08N3&DSE047N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 3.9m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.7m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F

 9.2. Size:835K  cn wxdh
 dsg048n08n3.pdf pdf_icon

DSG045N14N

DSG048N08N3 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Fast switching Low on resistance Low g

 9.3. Size:901K  cn wxdh
 dsg041n08na.pdf pdf_icon

DSG045N14N

DSG041N08NA 180A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 180A D 2 Features Fast switching Low on resistance Low g

MOSTRAR MÁS

Otros transistores... DHS045N98B, DHS045N98D, DHS045N98E, DHS045N98F, DHS045N98I, DSG028N10NA, DSG030N10N3, DSG041N08NA, K4145, DSG047N08N3, DSG048N08N3, DSG052N14N, DSG053N08N3, DSG054N10N3, DSG059N15NA, DSG070N10L3, DSG070N15NA