DSG053N08N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DSG053N08N3&DSE051N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 4.8mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 4.4mT0-263DS(on) (TYP)13 SI = 120AD2 F

DSE054N10N3&DSG054N10N3 100V/4.6m/140A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 4.6mRDS(on)typ.TO-220 100% single pulse avalanche energy test 4.8mID 100% VDS test 140A Pb-Free plating / Halogen-Free / RoHS compliant Vth 3VCiss@10V4912pFQgd 16nCApplications M

DSG059N15NA150A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, which 2 DV = 150VDSSprovides excellent Rdson and low Gate charge at the sametime. Which accords with the RoHS standard.GR = 5.0mDS(on) (TYP)13 S2 FeaturesI = 150AD Low on resistance Low ga

DSG052N14N/DSE050N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI