DSG053N08N3 Datasheet. Specs and Replacement

Type Designator: DSG053N08N3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 651 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO220

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DSG053N08N3 datasheet

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 dsg053n08n3 dse051n08n3.pdf pdf_icon

DSG053N08N3

DSG053N08N3&DSE051N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 4.8m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 4.4m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F... See More ⇒

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 dse054n10n3 dsg054n10n3.pdf pdf_icon

DSG053N08N3

DSE054N10N3&DSG054N10N3 100V/4.6m /140A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. TO-263 Low reverse transfer capacitances 4.6m RDS(on)typ. TO-220 100% single pulse avalanche energy test 4.8m ID 100% VDS test 140A Pb-Free plating / Halogen-Free / RoHS compliant Vth 3V Ciss@10V 4912pF Qgd 16nC Applications M... See More ⇒

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 dsg059n15na.pdf pdf_icon

DSG053N08N3

DSG059N15NA 150A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which 2 D V = 150V DSS provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. G R = 5.0m DS(on) (TYP) 1 3 S 2 Features I = 150A D Low on resistance Low ga... See More ⇒

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 dsg052n14n dse050n14n.pdf pdf_icon

DSG053N08N3

DSG052N14N/DSE050N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I... See More ⇒

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Detailed specifications: DHS045N98I, DSG028N10NA, DSG030N10N3, DSG041N08NA, DSG045N14N, DSG047N08N3, DSG048N08N3, DSG052N14N, 5N65, DSG054N10N3, DSG059N15NA, DSG070N10L3, DSG070N15NA, DSG108N20NA, DSG140N12N3, DSG270N12N3, DSN108N20N

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