DHS025N88E Todos los transistores

 

DHS025N88E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS025N88E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 384 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 205 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 118 nS
   Cossⓘ - Capacitancia de salida: 1282 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO263
 

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DHS025N88E Datasheet (PDF)

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 dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf pdf_icon

DHS025N88E

DHS025N88/DHS025N88F/DHS025N88IDHS025N88E/DHS025N88D/DHS025N88B205A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.5mDS(on) (TYP)the RoHS standard.13 SI = 205AD2 Feature

 7.1. Size:871K  cn wxdh
 dhs025n06 dhs025n06e.pdf pdf_icon

DHS025N88E

DHS025N06/DHS025N06E180A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV =60VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR =2.5 mTO-220DS(on) (TYP)Gthe RoHS standard.1R =2.2 mTO-263DS(on) (TYP)3 S2 FeaturesI =

 7.2. Size:1171K  cn wxdh
 dhs025n10 dhs025n10e dhs025n10d dhs025n10b.pdf pdf_icon

DHS025N88E

DHS025N10/DHS025N10EDHS025N10D/DHS025N10B240A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV =100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.8mDS(on) (TYP)the RoHS standard.13 SI = 240AD2 Features Low on resistanc

 7.3. Size:906K  cn wxdh
 dhs025n10u.pdf pdf_icon

DHS025N88E

DHS025N10U180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV =100VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.2mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI =180AD2 Features Low on resistance Low gate

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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