DHS025N88E Datasheet and Replacement. Cross Reference Search

DHS025N88E Datasheet (PDF)

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dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf pdf_icon

DHS025N88/DHS025N88F/DHS025N88IDHS025N88E/DHS025N88D/DHS025N88B205A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.5mDS(on) (TYP)the RoHS standard.13 SI = 205AD2 Feature

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dhs025n06 dhs025n06e.pdf pdf_icon

DHS025N06/DHS025N06E180A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV =60VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR =2.5 mTO-220DS(on) (TYP)Gthe RoHS standard.1R =2.2 mTO-263DS(on) (TYP)3 S2 FeaturesI =

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DHS025N10/DHS025N10EDHS025N10D/DHS025N10B240A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV =100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.8mDS(on) (TYP)the RoHS standard.13 SI = 240AD2 Features Low on resistanc

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dhs025n10u.pdf pdf_icon

DHS025N10U180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV =100VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.2mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI =180AD2 Features Low on resistance Low gate

Datasheet: DSG054N10N3 , DSG059N15NA , DSG070N10L3 , DSG070N15NA , DSG108N20NA , DSG140N12N3 , DSG270N12N3 , DSN108N20N , IRF1407 , DHS025N88F , DHS025N88I , DHS030N88 , DHS030N88E , DHS030N88F , DHS030N88I , DHS046N10 , DHS046N10B .