DHS030N88F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHS030N88F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105.7 nS

Cossⓘ - Capacitancia de salida: 1112 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: TO220F

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DHS030N88F datasheet

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 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS030N88F

DHS030N88/DHS030N88F/ DHS030N88I/DHS030N88E 174A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 174A D 2 Features Fast switching

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 dhs031n07p.pdf pdf_icon

DHS030N88F

DHS031N07P 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided V =68V DSS excellent Rdson and low gate charge. Which accords with G R =2.9m DS(on) (TYP) the RoHS standard. 1 3 S I Silicon limit = 150A D 2 Features I Package limit 100A = Fas

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 dhs035n10 dhs035n10e.pdf pdf_icon

DHS030N88F

DHS035N10&DHS035N10E 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 100V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 3.2m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 3.0m TO-263 DS(on) (TYP) 3 S

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DHS030N88F

DHS035N88/DHS035N88E/DHS035N88I 175A 80V N-channel Enhancement Mode Power MOSFET 1 Description V = 80V DSS These N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided R =3.6m (TO-220&262) DS(on)(TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.3m (TO-263) DS(on) (TYP) 1 3 S I =175A D

MOSTRAR MÁS

Otros transistores... DSG140N12N3, DSG270N12N3, DSN108N20N, DHS025N88E, DHS025N88F, DHS025N88I, DHS030N88, DHS030N88E, IRFP250, DHS030N88I, DHS046N10, DHS046N10B, DHS046N10D, DHS046N10E, DHS046N10F, DHS046N10I, DHS051N10P