DHS030N88F Datasheet. Specs and Replacement

Type Designator: DHS030N88F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105.7 nS

Cossⓘ - Output Capacitance: 1112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO220F

  📄📄 Copy 

DHS030N88F substitution

- MOSFET ⓘ Cross-Reference Search

 

DHS030N88F datasheet

 ..1. Size:1016K  cn wxdh
 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS030N88F

DHS030N88/DHS030N88F/ DHS030N88I/DHS030N88E 174A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 174A D 2 Features Fast switching... See More ⇒

 9.1. Size:775K  cn wxdh
 dhs031n07p.pdf pdf_icon

DHS030N88F

DHS031N07P 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided V =68V DSS excellent Rdson and low gate charge. Which accords with G R =2.9m DS(on) (TYP) the RoHS standard. 1 3 S I Silicon limit = 150A D 2 Features I Package limit 100A = Fas... See More ⇒

 9.2. Size:988K  cn wxdh
 dhs035n10 dhs035n10e.pdf pdf_icon

DHS030N88F

DHS035N10&DHS035N10E 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 100V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 3.2m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 3.0m TO-263 DS(on) (TYP) 3 S ... See More ⇒

 9.3. Size:975K  cn wxdh
 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS030N88F

DHS035N88/DHS035N88E/DHS035N88I 175A 80V N-channel Enhancement Mode Power MOSFET 1 Description V = 80V DSS These N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided R =3.6m (TO-220&262) DS(on)(TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.3m (TO-263) DS(on) (TYP) 1 3 S I =175A D ... See More ⇒

SHOW MORE

Detailed specifications: DSG140N12N3, DSG270N12N3, DSN108N20N, DHS025N88E, DHS025N88F, DHS025N88I, DHS030N88, DHS030N88E, IRFP250, DHS030N88I, DHS046N10, DHS046N10B, DHS046N10D, DHS046N10E, DHS046N10F, DHS046N10I, DHS051N10P

Keywords - DHS030N88F MOSFET specs

 DHS030N88F cross reference

 DHS030N88F equivalent finder

 DHS030N88F pdf lookup

 DHS030N88F substitution

 DHS030N88F replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.