DHS052N10D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHS052N10D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 190 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 163 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm

Encapsulados: TO252

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DHS052N10D datasheet

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 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf pdf_icon

DHS052N10D

DHS052N10/DHS052N10F/DHS052N10I DHS052N10E/DHS052N10B/DHS052N10D 110A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 110A D 2 Featu

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 dhs052n10p.pdf pdf_icon

DHS052N10D

DHS052N10P 99A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.2m DS(on) (TYP) the RoHS standard. 1 3 S I = 99A D 2 Features Fast switching Low on resistance Low g

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 dhs051n10p.pdf pdf_icon

DHS052N10D

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch

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 dhs055n07b dhs055n07d.pdf pdf_icon

DHS052N10D

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance

MOSTRAR MÁS

Otros transistores... DSE058N15NA, DSE065N10L3A, DSE108N20NA, DSE140N12N3, DSE270N12N3, DSG014N04N, DSG019N04L, DSG024N10N3, IRF9640, DHS052N10E, DHS052N10F, DHS052N10I, DHS052N10P, DHS055N07, DHS055N07B, DHS055N07D, DHS055N07E