DHS055N07D Todos los transistores

 

DHS055N07D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS055N07D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 95 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 77.1 nS
   Cossⓘ - Capacitancia de salida: 466 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO252
 

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DHS055N07D Datasheet (PDF)

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 dhs055n07b dhs055n07d.pdf pdf_icon

DHS055N07D

DHS055N07B/DHS055N07D95A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, provided V =68V2 D DSSexcellent Rdson and low gate charge. Which accords withR = 6.0mDS(on) (TYP)the RoHS standard.G1I = 95AD3 S2 Features Fast switching Low on resistance

 5.1. Size:859K  cn wxdh
 dhs055n07 dhs055n07e.pdf pdf_icon

DHS055N07D

DHS055N07/DHS055N07E105A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =68VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 6.0mTO-220DS(on) (TYP)the RoHS standard. G1R = 5.7mTO-263DS(on) (TYP)3 S2 FeaturesI = 105

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 dhs055n85 dhs055n85e dhs055n85d dhs055n85b.pdf pdf_icon

DHS055N07D

DHS055N85/DHS055N85E/DHS055N85D/DHS055N85B110A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =5.5mDS(on) (TYP)Gstandard.1I = 110AD3 S2 Features Fast switching Low

 9.1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS055N07D

DHS051N10P108A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced Splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.0mDS(on) (TYP)G1standard.I = 108A3 S D2 Features Fast switching Low on resistance Low gate ch

MOSTRAR MÁS

Otros transistores... DSG024N10N3 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , DHS052N10P , DHS055N07 , DHS055N07B , HY1906P , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , DHS065N10P , DHS065N85 .

 

 
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