All MOSFET. DHS055N07D Datasheet

 

DHS055N07D Datasheet and Replacement


   Type Designator: DHS055N07D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30.5 nC
   tr ⓘ - Rise Time: 77.1 nS
   Cossⓘ - Output Capacitance: 466 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO252
 

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DHS055N07D Datasheet (PDF)

 ..1. Size:875K  cn wxdh
 dhs055n07b dhs055n07d.pdf pdf_icon

DHS055N07D

DHS055N07B/DHS055N07D95A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, provided V =68V2 D DSSexcellent Rdson and low gate charge. Which accords withR = 6.0mDS(on) (TYP)the RoHS standard.G1I = 95AD3 S2 Features Fast switching Low on resistance

 5.1. Size:859K  cn wxdh
 dhs055n07 dhs055n07e.pdf pdf_icon

DHS055N07D

DHS055N07/DHS055N07E105A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =68VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withR = 6.0mTO-220DS(on) (TYP)the RoHS standard. G1R = 5.7mTO-263DS(on) (TYP)3 S2 FeaturesI = 105

 7.1. Size:1220K  cn wxdh
 dhs055n85 dhs055n85e dhs055n85d dhs055n85b.pdf pdf_icon

DHS055N07D

DHS055N85/DHS055N85E/DHS055N85D/DHS055N85B110A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR =5.5mDS(on) (TYP)Gstandard.1I = 110AD3 S2 Features Fast switching Low

 9.1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS055N07D

DHS051N10P108A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced Splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.0mDS(on) (TYP)G1standard.I = 108A3 S D2 Features Fast switching Low on resistance Low gate ch

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