DHS055N07E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DHS055N07E  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 114 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 105 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77.1 nS

Cossⓘ - Capacitancia de salida: 466 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0067 Ohm

Encapsulados: TO263

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DHS055N07E datasheet

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 dhs055n07 dhs055n07e.pdf pdf_icon

DHS055N07E

DHS055N07/DHS055N07E 105A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =68V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 6.0m TO-220 DS(on) (TYP) the RoHS standard. G 1 R = 5.7m TO-263 DS(on) (TYP) 3 S 2 Features I = 105

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 dhs055n07b dhs055n07d.pdf pdf_icon

DHS055N07E

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance

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 dhs055n85 dhs055n85e dhs055n85d dhs055n85b.pdf pdf_icon

DHS055N07E

DHS055N85/DHS055N85E /DHS055N85D/DHS055N85B 110A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =5.5m DS(on) (TYP) G standard. 1 I = 110A D 3 S 2 Features Fast switching Low

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 dhs051n10p.pdf pdf_icon

DHS055N07E

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch

MOSTRAR MÁS

Otros transistores... DHS052N10D, DHS052N10E, DHS052N10F, DHS052N10I, DHS052N10P, DHS055N07, DHS055N07B, DHS055N07D, AO4407A, DHS055N85, DHS055N85B, DHS055N85D, DHS055N85E, DHS065N10, DHS065N10P, DHS065N85, DHS065N85B