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DHS055N07E Spec and Replacement


   Type Designator: DHS055N07E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77.1 nS
   Cossⓘ - Output Capacitance: 466 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: TO263

 DHS055N07E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS055N07E Specs

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 dhs055n07 dhs055n07e.pdf pdf_icon

DHS055N07E

DHS055N07/DHS055N07E 105A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =68V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 6.0m TO-220 DS(on) (TYP) the RoHS standard. G 1 R = 5.7m TO-263 DS(on) (TYP) 3 S 2 Features I = 105... See More ⇒

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 dhs055n07b dhs055n07d.pdf pdf_icon

DHS055N07E

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance ... See More ⇒

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 dhs055n85 dhs055n85e dhs055n85d dhs055n85b.pdf pdf_icon

DHS055N07E

DHS055N85/DHS055N85E /DHS055N85D/DHS055N85B 110A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =5.5m DS(on) (TYP) G standard. 1 I = 110A D 3 S 2 Features Fast switching Low... See More ⇒

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 dhs051n10p.pdf pdf_icon

DHS055N07E

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch... See More ⇒

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Detailed specifications: DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , DHS052N10P , DHS055N07 , DHS055N07B , DHS055N07D , AO4407A , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , DHS065N10P , DHS065N85 , DHS065N85B .

Keywords - DHS055N07E MOSFET specs

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