DHS065N85B Todos los transistores

 

DHS065N85B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DHS065N85B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 47 nC
   trⓘ - Tiempo de subida: 85.2 nS
   Cossⓘ - Capacitancia de salida: 535 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0078 Ohm
   Paquete / Cubierta: TO251
 

 Búsqueda de reemplazo de DHS065N85B MOSFET

   - Selección ⓘ de transistores por parámetros

 

DHS065N85B Datasheet (PDF)

 ..1. Size:1177K  cn wxdh
 dhs065n85 dhs065n85f dhs065n85i dhs065n85e dhs065n85b dhs065n85d.pdf pdf_icon

DHS065N85B

DHS065N85/DHS065N85F/DHS065N85IDHS065N85E/DHS065N85B/DHS065N85D100A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features

 5.1. Size:904K  cn wxdh
 dhs065n85p.pdf pdf_icon

DHS065N85B

DHS065N85P80A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.8mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low gate

 7.1. Size:672K  cn wxdh
 dhs065n10p.pdf pdf_icon

DHS065N85B

DHS065N10P80A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 6.5mDS(on) (TYP)the RoHS standard.13 SI = 80AD2 Features Fast switching Low on resistance Low g

 7.2. Size:784K  cn wxdh
 dhs065n10.pdf pdf_icon

DHS065N85B

DHS065N1095A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 7.4mDS(on) (TYP)the RoHS standard.13 SI = 95AD2 Features Fast switching Low on resistance Low ga

MOSTRAR MÁS

Otros transistores... DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E , DHS065N10 , DHS065N10P , DHS065N85 , 20N60 , DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 .

 

 
Back to Top

 


 
.