HUF75639S3 Todos los transistores

 

HUF75639S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF75639S3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO262 I2PAK
 

 Búsqueda de reemplazo de HUF75639S3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HUF75639S3 Datasheet (PDF)

 ..1. Size:229K  fairchild semi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 ..2. Size:720K  onsemi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3

MOSFET Power, N-Channel,Ultrafet100 V, 56 A, 25 mWHUF75639G3, HUF75639P3,HUF75639S3S, HUF75639S3www.onsemi.comThese N-Channel power MOSFETs are manufactured using theinnovative Ultrafet process. This advanced process technologyachieves the lowest possible on- resistance per silicon area, resultingin outstanding performance. This device is capable of withstandinghigh ener

 0.1. Size:227K  fairchild semi
 huf75639s3st.pdf pdf_icon

HUF75639S3

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 5.1. Size:230K  fairchild semi
 huf75639s f085a.pdf pdf_icon

HUF75639S3

HUFA75639S3ST_F085AData Sheet March 201256A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Peak Current vs Pulse Width Curveare manufactured using the UIS Rating Curveinnovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar

MOSTRAR MÁS

Otros transistores... FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , K4145 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 .

History: TMPF6N70 | IRF5803TRPBF | SHDC224701 | FCU600N65S3R0 | RU40191S | NCEP040N12D

 

 
Back to Top

 


 
.