All MOSFET. HUF75639S3 Datasheet

 

HUF75639S3 Datasheet and Replacement


   Type Designator: HUF75639S3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO262 I2PAK
 

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HUF75639S3 Datasheet (PDF)

 ..1. Size:229K  fairchild semi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 ..2. Size:720K  onsemi
 huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf pdf_icon

HUF75639S3

MOSFET Power, N-Channel,Ultrafet100 V, 56 A, 25 mWHUF75639G3, HUF75639P3,HUF75639S3S, HUF75639S3www.onsemi.comThese N-Channel power MOSFETs are manufactured using theinnovative Ultrafet process. This advanced process technologyachieves the lowest possible on- resistance per silicon area, resultingin outstanding performance. This device is capable of withstandinghigh ener

 0.1. Size:227K  fairchild semi
 huf75639s3st.pdf pdf_icon

HUF75639S3

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 5.1. Size:230K  fairchild semi
 huf75639s f085a.pdf pdf_icon

HUF75639S3

HUFA75639S3ST_F085AData Sheet March 201256A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Peak Current vs Pulse Width Curveare manufactured using the UIS Rating Curveinnovative UltraFET process. This advanced process technology Related Literature achieves the lowest possible on-resistance per silicon ar

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Datasheet: FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , K4145 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 , HUFA75639S3S , FDD86110 .

History: IRCZ245 | 2SK1017-01 | AUIRFB4610

Keywords - HUF75639S3 MOSFET datasheet

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