All MOSFET. HUF75639S3 Datasheet

 

HUF75639S3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF75639S3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 110 nC

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO262_I2PAK

HUF75639S3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF75639S3 Datasheet (PDF)

1.1. huf75639s3st.pdf Size:227K _update_mosfet

HUF75639S3 HUF75639S3

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber T

1.2. huf75639g3 huf75639p3 huf75639s3s huf75639s3.pdf Size:229K _fairchild_semi

HUF75639S3 HUF75639S3

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber Thermal Impe

 1.3. huf75639s f085a.pdf Size:230K _fairchild_semi

HUF75639S3 HUF75639S3

HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Peak Current vs Pulse Width Curve are manufactured using the • UIS Rating Curve innovative UltraFET® process. This advanced process technology • Related Literature achieves the lowest possible on-resistance per silicon ar

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