F5N65C MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

F5N65C datasheet

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F5N65C 5A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 5A D performance and enhance the avalanche energy. Which accords with the RoHS standard.TO-220F provides insulation voltage rated at 2000V RMS R DS(on) TYP) =

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Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANN

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SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)typ. = 2.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

Otros transistores... DHSJ25N65F , DSE012N04NA , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , F50N20 , 2N7000 , F5N80 , F630 , F640 , F6N90 , F740 , F7N60 , F7N70 , F7N80 .