F5N65C Datasheet and Replacement. Cross Reference Search

F5N65C Datasheet (PDF)

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F5N65C5A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 5ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.TO-220F provides insulation voltage rated at 2000V RMSRDS(on)TYP)=

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Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF5N65CN- MOS / N-CHANNEL POWER MOSFET SIF5N65CN- MOS / N-CHANN

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N N-CHANNEL MOSFET FHU5N65C/FHD5N65C/FHP5N65C/FHF5N65C MAIN CHARACTERISTICS FEATURES ID 5A Low gate charge VDSS 650V Crss ( 3.5pF) Low Crss (typical 3.5pF ) Rdson-typ @Vgs=10V 2.1 Fast switching Qg-typ 14.5nC 100% 100% avalanche tested

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SLP5N65C / SLF5N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 4.5A, 650V, RDS(on)typ. = 2.6@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 16nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

Datasheet: DHSJ25N65F , DSE012N04NA , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , F50N20 , IRF9540 , F5N80 , F630 , F640 , F6N90 , F740 , F7N60 , F7N70 , F7N80 .