F5N65C MOSFET Datasheet: N-Ch, 650V, 5A. Full specification with pinout and replacement list

F5N65C Specs and Replacement

   Type Designator: F5N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO220F

F5N65C substitution

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F5N65C datasheet

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F5N65C 5A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 5A D performance and enhance the avalanche energy. Which accords with the RoHS standard.TO-220F provides insulation voltage rated at 2000V RMS R DS(on) TYP) =... See More ⇒

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Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANNEL POWER MOSFET SIF5N65C N- MOS / N-CHANN... See More ⇒

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SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 4.5A, 650V, RDS(on)typ. = 2.6 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 16nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching ... See More ⇒

Detailed specifications: DHSJ25N65F , DSE012N04NA , DSE022N10N3 , F4N60 , F4N65 , F4N70 , F50N06 , F50N20 , 2N7000 , F5N80 , F630 , F640 , F6N90 , F740 , F7N60 , F7N70 , F7N80 .