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F5N80 5A 800V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 800V planar technology which reduce the conduction loss, improve switching I = 5.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =2.

STF5N80K5 N-channel 800 V, 1.50 typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) D STF5N80K5 800 V 1.75 4 A Industry s lowest R x area DS(on) Industry s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FP Applications

September 2000 TM QFET FQPF5N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 800V, RDS(on) = 2.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 25 nC) planar stripe, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailo

WFF5N80 WFF5N80 WFF5N80 WFF5N80 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,800V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STF5N80K5 FEATURES Ultra-low gate charge Zener-protected 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V Gate-Source V