F5N80 Datasheet and Replacement

F5N805A 800V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 800Vplanar technology which reduce the conduction loss, improve switchingI = 5.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)=2.

STF5N80K5 N-channel 800 V, 1.50 typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V R max. I DS DS(on) DSTF5N80K5 800 V 1.75 4 A Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected TO-220FPApplications

September 2000TMQFETFQPF5N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, RDS(on) = 2.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailo

WFF5N80WFF5N80WFF5N80WFF5N80Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,800V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 14nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF5N80K5FEATURESUltra-low gate chargeZener-protected100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 800 VDSSV Gate-Source V