F7N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

F7N607A 600V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 600Vplanar technology which reduce the conduction loss, improve switchingI = 7.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)=1.

November 2001SSF7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast s

STF7N60M2N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP packageDatasheet - production dataFeaturesVDS @ RDS(on) Order code IDTJmax maxSTF7N60M2 650 V 0.95 5 A Extremely low gate charge32 Lower RDS(on) x area vs previous generation1 Low gate input resistanceTO-220FP 100% avalanche tested Zener-protectedApp

December 2008 TMSuperFETFCP7N60/FCPF7N60/FCPF7N60YDTUFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

April 2000TMQFETQFETQFETQFETFQPF7N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC)planar stripe, DMOS technology. Low Crss ( typical 16 pF)This advanced technology has been es

September 2010UniFET-II TMFDP7N60NZ / FDPF7N60NZN-Channel MOSFET600V, 6.5A, 1.25Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 13nC)DOMS technology. Low Crss ( Typ. 7pF)This advance techn

December 2009SupreMOSTMFCP7N60N / FCPF7N60NTN-Channel MOSFET 600V, 6.8A, 0.52Features Description RDS(on) = 0.46 ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchilds next generation of highvoltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 17.8nC)process that differentiates it from preceding multi-epi based

SiHF7N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6 Reduced Switching and Conduction LossesQg max. (nC) 40 Ultra Low Gate Charge (Qg)Qgs (nC) 5 Avalanche Energy Rated (UIS)Qgd (nC) 9 Mate

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp

KF7N60P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF7N60PAThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_correction and switching mode power supp

AOT7N60/AOTF7N60600V,7A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT7N60 & AOTF7N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF7N60FD600V, 7A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS700V@150The AOTF7N60FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 7Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N60DN- MOS / N-CHANNEL POWER MOSFET SIF7N60DN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF7N60CN- MOS / N-CHANNEL POWER MOSFET SIF7N60CN

SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage NChannel enhancement mode

SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

BRF7N60(BRCS7N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for

Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220FThey are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

SVF7N60F/S/D 7A600V N SVF7N60F/S/D N MOS F-CellTM VDMOS AC-DC

SVF7N60CF/S/K/MJ/D/T 7A600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

SVF7N60CF/S/K/MJ/D/T 7A600V N 2 SVF7N60CF/S/K/MJ/D/T N MOS 1213 F-CellTM VDMOS TO-251J-3L3

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- V = 660V @ T DS jmaxstate resistance, high switching performance and excellent I = 7.0A @ V = 10V D GSquality. RDS(ON) 1.15 @ VGS = 10V Applications These devices

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

WFF7N60WFF7N60WFF7N60WFF7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7A,600V,R (Max 1.2)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

SFF7N60SFF7N60SFF7N60SFF7N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7A,600V,R (Max 1.0)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC)ISO Maximum Junction Temperature Range(150)General Descri

N N-CHANNEL MOSFET FHP7N60A /FHF7N60A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 600V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) : 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application: AdaptorLED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3 3 TV

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A

TSP7N60M/TSF7N60M600V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and

SMF7N60600V N-Channnel MOSFETFeatures 7.0A, 600V, R =1.0@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

isc N-Channel MOSFET Transistor AOTF7N60FEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor AOTF7N60FDFEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =1.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor FDPF7N60NZFEATURESDrain Current I = 6.5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp