F7N60 - описание и поиск аналогов

F7N60 7A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 600V planar technology which reduce the conduction loss, improve switching I = 7.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =1.

November 2001 SSF7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast s

STF7N60M2 N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in TO-220FP package Datasheet - production data Features VDS @ RDS(on) Order code ID TJmax max STF7N60M2 650 V 0.95 5 A Extremely low gate charge 3 2 Lower RDS(on) x area vs previous generation 1 Low gate input resistance TO-220FP 100% avalanche tested Zener-protected App

December 2008 TM SuperFET FCP7N60/FCPF7N60/FCPF7N60YDTU Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.53 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=25nC) lower gate charge performance. This advan

April 2000 TM QFET QFET QFET QFET FQPF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been es

September 2010 UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 13nC) DOMS technology. Low Crss ( Typ. 7pF) This advance techn

December 2009 SupreMOSTM FCP7N60N / FCPF7N60NT N-Channel MOSFET 600V, 6.8A, 0.52 Features Description RDS(on) = 0.46 ( Typ.) @ VGS = 10V, ID = 3.4A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg = 17.8nC) process that differentiates it from preceding multi-epi based

SiHF7N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 Reduced Switching and Conduction Losses Qg max. (nC) 40 Ultra Low Gate Charge (Qg) Qgs (nC) 5 Avalanche Energy Rated (UIS) Qgd (nC) 9 Mate

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp

KF7N60P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF7N60P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G _ correction and switching mode power supp

AOT7N60/AOTF7N60 600V,7A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT7N60 & AOTF7N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF7N60FD 600V, 7A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 700V@150 The AOTF7N60FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 7A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N60D N- MOS / N-CHANNEL POWER MOSFET SIF7N60D N

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N60C N- MOS / N-CHANNEL POWER MOSFET SIF7N60C N

SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N Channel enhancement mode

SSF7N60F Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

BRF7N60(BRCS7N60FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for

Shantou Huashan Electronic Devices Co., Ltd. HFF7N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220F They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performan

SVF7N60CF/S/K/MJ/D/T 7A 600V N SVF7N60CF/S/K/MJ/D/T N MOS F-CellTM VDMOS

SVF7N60T/F_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching

MDP7N60B / MDF7N60B N-Channel MOSFET 600V, 7.0A, 1.15 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- V = 660V @ T DS jmax state resistance, high switching performance and excellent I = 7.0A @ V = 10V D GS quality. RDS(ON) 1.15 @ VGS = 10V Applications These devices

MSF7N60 600V N-Channel MOSFET Description The MSF7N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirem

WFF7N60 WFF7N60 WFF7N60 WFF7N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7A,600V,R (Max 1.2 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri

SFF7N60 SFF7N60 SFF7N60 SFF7N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 7A,600V,R (Max 1.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) General Descri

N N-CHANNEL MOSFET FHP7N60A /FHF7N60A MAIN CHARACTERISTICS FEATURES ID 7A Low gate charge VDSS 600V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 0.9 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

SLP7N60C / SLF7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 600V, RDS(on)Typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 0.5 )@VGS=10V RDS(ON) 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Adaptor LED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3 3 TV

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS 600V High ruggedness ID 7A Low RDS(ON) (Typ 1.05 )@VGS=10V RDS(ON) 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application UPS Inverter 3 3 3

TMP7N60Z(G)/TMPF7N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 7A

TSP7N60M/TSF7N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 7.0A,600V,Max.RDS(on)=1.3 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 29nC) minimize on-state resistance, provide superior switching High ruggedness performance, and

SMF7N60 600V N-Channnel MOSFET Features 7.0A, 600V, R =1.0 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction Absolute Maximum Ratings(Tc=25 C unless otherwise noted) Symbol Parameter Value

isc N-Channel MOSFET Transistor AOTF7N60 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor AOTF7N60FD FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.45 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor FDPF7N60NZ FEATURES Drain Current I = 6.5A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p