I50N06 Datasheet. Equivalente

 ..1. Size:1133K  cn wxdh
 50n06 f50n06 i50n06 e50n06 b50n06 d50n06.pdf

50N06/F50N06/I50N06/ E50N06/B50N06/D50N06 60A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 68V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 10.5m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low ga

 0.1. Size:1038K  fairchild semi
 fqb50n06 fqi50n06.pdf

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially

 0.2. Size:1015K  fairchild semi
 fqb50n06tm fqi50n06tu.pdf

October 2008 QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 65 pF) This advanced technology has been especially

 0.3. Size:1022K  fairchild semi
 fqb50n06ltm fqi50n06ltu.pdf

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee

 0.4. Size:1052K  fairchild semi
 fqb50n06l fqi50n06l.pdf

October 2008 QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 24.5 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has bee

 0.5. Size:1062K  onsemi
 fqb50n06 fqi50n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.6. Size:833K  blue-rocket-elect
 bri50n06.pdf

BRI50N06 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast speed switching. / Applications DC/DC

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 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf

 0.8. Size:418K  semihow
 hfi50n06a hfw50n06a.pdf

Oct 2016 HFI50N06A / HFW50N06A 60V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 60 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 50 A Excellent Switching Characteristics RDS(on), Typ 18 100% Avalanche Tested Qg, Typ 27 nC RoHS Compliant HFI50N06A HFW50N06A Symbol TO-262 TO-263 D S

 0.9. Size:237K  semihow
 hfi50n06 hfw50n06.pdf

Nov 2009 BVDSS = 60 V RDS(on) = 18 m HFW50N06 / HFI50N06 ID = 50 A 60V N-Channel MOSFET D2-PAK I2-PAK FEATURES Originative New Design HFW50N06 HFI50N06 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Extended Safe Operati

 0.10. Size:1159K  sirectifier
 sii50n06.pdf

SII50N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol Conditions Values Units IGBT Wechselrichter/ IGBT Inverter VCES 600 V IC 75(50) TC= 25(80)oC, Tvj= 150oC A ICRM 100 TC= 80oC, tP =1ms A Ptot TC= 25oC, Tvj= 150oC 280 W _ VGES +20 V Diode Wechselrichter/ Diode Inverter VRRM 600 V IF 50 A IFRM 10

 0.11. Size:513K  jiejie micro
 jmti50n06b.pdf

JMTI50N06B Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,50A Load Switch R