I50N06 Datasheet and Replacement
Type Designator: I50N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 46.3 nC
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 174 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO262
I50N06 substitution
I50N06 Datasheet (PDF)
50n06 f50n06 i50n06 e50n06 b50n06 d50n06.pdf

50N06/F50N06/I50N06/E50N06/B50N06/D50N0660A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low ga
fqb50n06 fqi50n06.pdf

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially
fqb50n06tm fqi50n06tu.pdf

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially
fqb50n06ltm fqi50n06ltu.pdf

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee
Datasheet: F8N50 , F8N60 , F8N65 , FD120N10ZR , FN6005 , I110N04 , I20N50 , I25N10 , AON7410 , I630 , I640 , I740 , I80N06 , ID120N10ZR , IN6005 , N6005 , N6005B .
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