JBL101N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

JBL101N Datasheet (PDF)

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JBL101N100V 1.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 325 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.2 mWApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC

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JBL102T100V 1.8mW TOLL N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 272 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 mW Halogen-free and RoHS-compliantApplications Power Management in Telecom., Indust

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JBL102E100V 2.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 246 A RDS(ON) (@ VGS = 10V) 2.0 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics Curr

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JBL102Y100V 2.7mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS100 V Low Gate Charge Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 206 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 Pb-free Lead Plating m

Otros transistores... JBE102T , JBE102Y , JBE103T , JBE111P , JBE112Q , JBE112T , JBE113P , JBL083M , IRF830 , JMSH0605AGD , JMSH0605AGDQ , JMSH0606AG , JMSH0606AGQ , JMSH0606AK , JMSH0606AKQ , JMSH0606AU , JMSH0606PC .