JBL101N PDF and Equivalents Search

 ..1. Size:788K  jiejie micro
 jbl101n.pdf

JBL101N 100V 1.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 325 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.2 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC... See More ⇒

 9.1. Size:1062K  jiejie micro
 jbl102t.pdf

JBL102T 100V 1.8mW TOLL N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 272 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Indust... See More ⇒

 9.2. Size:1079K  jiejie micro
 jbl102e.pdf

JBL102E 100V 2.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 246 A RDS(ON) (@ VGS = 10V) 2.0 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒

 9.3. Size:557K  jiejie micro
 jbl102y.pdf

JBL102Y 100V 2.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 206 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 Pb-free Lead Plating m... See More ⇒