All MOSFET. JBL101N Datasheet

 

JBL101N Datasheet and Replacement


   Type Designator: JBL101N
   Marking Code: BL101N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 325 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 230 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 2099 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: POWER-JE-10X12
 

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JBL101N Datasheet (PDF)

 ..1. Size:788K  jiejie micro
 jbl101n.pdf pdf_icon

JBL101N

JBL101N100V 1.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 325 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.2 mWApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC

 9.1. Size:1062K  jiejie micro
 jbl102t.pdf pdf_icon

JBL101N

JBL102T100V 1.8mW TOLL N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 272 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 mW Halogen-free and RoHS-compliantApplications Power Management in Telecom., Indust

 9.2. Size:1079K  jiejie micro
 jbl102e.pdf pdf_icon

JBL101N

JBL102E100V 2.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 246 A RDS(ON) (@ VGS = 10V) 2.0 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics Curr

 9.3. Size:557K  jiejie micro
 jbl102y.pdf pdf_icon

JBL101N

JBL102Y100V 2.7mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS100 V Low Gate Charge Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 206 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 Pb-free Lead Plating m

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