NDC7001C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NDC7001C
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.51(0.34) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8(10) nS
   Cossⓘ - Capacitancia de salida: 11(13) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2(5) Ohm
   Paquete / Cubierta: SSOT6

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NDC7001C Datasheet (PDF)

..1. Size:156K fairchild semi
ndc7001c.pdf

May 2002 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Q1 0.51 A, 60V. RDS(ON) = 2 @ VGS = 10 V Effect Transistors are produced using Fairchilds RDS(ON) = 4 @ VGS = 4.5 V proprietary, high cell density, DMOS technology. This very high density process has been des

..2. Size:270K onsemi
ndc7001c.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:84K fairchild semi
ndc7002n.pdf

March 1996 NDC7002NDual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density process has been designed to m

8.2. Size:494K onsemi
ndc7003p.pdf

NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field 0.34A, 60 V. RDS(ON) = 5 @ VGS = 10 VEffect Transistors are produced using ON RDS(ON) = 7 @ VGS = 4.5 V Semiconductors proprietary Trench Technology. This very high density process has been designed Low gate

8.3. Size:180K onsemi
ndc7002n.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

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ndc7002n.pdf

RRUMWUMWUMW NDC7002NUMW NDC7002NSOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density p

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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