NDC7001C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NDC7001C
Маркировка: .01C
Тип транзистора: MOSFET
Полярность: NP
Максимальная рассеиваемая мощность (Pd): 0.96 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5(3.5) V
Максимально допустимый постоянный ток стока |Id|: 0.51(0.34) A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 1.1(1.6) nC
Время нарастания (tr): 8(10) ns
Выходная емкость (Cd): 11(13) pf
Сопротивление сток-исток открытого транзистора (Rds): 2(5) Ohm
Тип корпуса: SSOT6
NDC7001C Datasheet (PDF)
ndc7001c.pdf
May 2002 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N & P-Channel Enhancement Mode Field Q1 0.51 A, 60V. RDS(ON) = 2 @ VGS = 10 V Effect Transistors are produced using Fairchilds RDS(ON) = 4 @ VGS = 4.5 V proprietary, high cell density, DMOS technology. This very high density process has been des
ndc7001c.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ndc7002n.pdf
March 1996 NDC7002NDual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density process has been designed to m
ndc7003p.pdf
NDC7003P Dual P-Channel PowerTrench MOSFET General Description Features These dual P-Channel Enhancement Mode Power Field 0.34A, 60 V. RDS(ON) = 5 @ VGS = 10 VEffect Transistors are produced using ON RDS(ON) = 7 @ VGS = 4.5 V Semiconductors proprietary Trench Technology. This very high density process has been designed Low gate
ndc7002n.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth
ndc7002n.pdf
RRUMWUMWUMW NDC7002NUMW NDC7002NSOT23-6 Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese dual N-Channel enhancement mode power field0.51A, 50V, RDS(ON) = 2 @ VGS=10Veffect transistors are produced using Fairchild'sHigh density cell design for low RDS(ON).proprietary, high cell density, DMOS technology. Thisvery high density p
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
