JMSH1504CTL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSH1504CTL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 600
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 150
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 252
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27
nS
Cossⓘ - Capacitancia
de salida: 860
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004
Ohm
Paquete / Cubierta:
TOLL
Búsqueda de reemplazo de MOSFET JMSH1504CTL
Principales características: JMSH1504CTL
..1. Size:386K jiejie micro
jmsh1504ctl.pdf 
JMSH1504CTL 150V 3.3m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.3 m Halogen-free and RoHS-compliant Applications Power Management in Compu
6.1. Size:352K jiejie micro
jmsh1504ntl.pdf
JMSH1504NTL 150V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A RDS(ON)_Typ (@ VGS = 10V) 3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industria
6.2. Size:1063K jiejie micro
jmsh1504ac jmsh1504ae.pdf
JMSH1504AC JMSH1504AE 150V 3.9mW N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 192 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 3.9 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Ma
6.3. Size:292K jiejie micro
jmsh1504aeq.pdf
JMSH1504AEQ 150V 3.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 210 A RDS(ON)_Typ (@ VGS = 10V) 3.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application
6.4. Size:351K jiejie micro
jmsh1504asq.pdf
JMSH1504ASQ 150V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 230 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
6.5. Size:1263K jiejie micro
jmsh1504nc.pdf
150V, 200A, 3.9m N-channel Power SGT MOSFET JMSH1504NC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 200 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.9 mW Applications Load Switch PWM Application Power Man
6.6. Size:350K jiejie micro
jmsh1504ns.pdf
JMSH1504NS 150V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 212 A RDS(ON)_Typ (@ VGS = 10V) 4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial
6.7. Size:1184K jiejie micro
jmsh1504ne7.pdf
150V, 154A, 3.7m N-channel Power SGT MOSFET JMSH1504NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 154 A RDS(ON)_Typ(@VGS=10V 3.7 mW Applications Load Switch PWM Application Power Management TO-263-7L S
6.8. Size:332K jiejie micro
jmsh1504atl.pdf
JMSH1504ATL 150V 3.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.3 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu
6.9. Size:290K jiejie micro
jmsh1504as.pdf
JMSH1504AS 150V 4.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 203 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial
6.10. Size:1342K jiejie micro
jmsh1504ne.pdf
150V, 200A, 3.7m N-channel Power SGT MOSFET JMSH1504NE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.3 V Halogen-free; RoHS-compliant ID(@VGS=10V) 200 A RDS(ON)_Typ(@VGS=10V 3.7 mW Applications Load Switch PWM Application Power Management D G S TO
6.11. Size:286K jiejie micro
jmsh1504ae7.pdf
JMSH1504AE7 150V 3.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 205 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 3.8 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerm
6.12. Size:381K jiejie micro
jmsh1504atlq.pdf
JMSH1504ATLQ 150V 3.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 227 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap
Otros transistores... JMSH1504AC
, JMSH1504AE
, JMSH1504AE7
, JMSH1504AEQ
, JMSH1504AS
, JMSH1504ASQ
, JMSH1504ATL
, JMSH1504ATLQ
, AO3407
, JMSH1504NC
, JMSH1504NE
, JMSH1504NE7
, JMSH1504NS
, JMSH1504NTL
, JMSH1505ATL
, JMPE18N20BJ
, JMPE34N20BJ
.
History: DHE035N04
