JMSH1504CTL Datasheet and Replacement
Type Designator: JMSH1504CTL
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 600
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 252
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 27
nS
Cossⓘ -
Output Capacitance: 860
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004
Ohm
Package:
TOLL
-
MOSFET ⓘ Cross-Reference Search
JMSH1504CTL Datasheet (PDF)
..1. Size:386K jiejie micro
jmsh1504ctl.pdf 
JMSH1504CTL150V 3.3m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.3 m Halogen-free and RoHS-compliantApplications Power Management in Compu
6.1. Size:352K jiejie micro
jmsh1504ntl.pdf
JMSH1504NTL150V 3.3m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A RDS(ON)_Typ (@ VGS = 10V)3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industria
6.2. Size:1063K jiejie micro
jmsh1504ac jmsh1504ae.pdf
JMSH1504ACJMSH1504AE150V 3.9mW N-Ch Power MOSFETFeatures Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 192 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 3.9 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Ma
6.3. Size:292K jiejie micro
jmsh1504aeq.pdf
JMSH1504AEQ150V 3.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 210 A RDS(ON)_Typ (@ VGS = 10V)3.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application
6.4. Size:351K jiejie micro
jmsh1504asq.pdf
JMSH1504ASQ150V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 230 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
6.5. Size:1263K jiejie micro
jmsh1504nc.pdf
150V, 200A, 3.9m N-channel Power SGT MOSFETJMSH1504NCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 200 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.9 mWApplications Load Switch PWM Application Power Man
6.6. Size:350K jiejie micro
jmsh1504ns.pdf
JMSH1504NS150V 4.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 212 A RDS(ON)_Typ (@ VGS = 10V)4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial
6.7. Size:1184K jiejie micro
jmsh1504ne7.pdf
150V, 154A, 3.7m N-channel Power SGT MOSFETJMSH1504NE7Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 154 ARDS(ON)_Typ(@VGS=10V 3.7 mWApplications Load Switch PWM Application Power ManagementTO-263-7L S
6.8. Size:332K jiejie micro
jmsh1504atl.pdf
JMSH1504ATL150V 3.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.3 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indu
6.9. Size:290K jiejie micro
jmsh1504as.pdf
JMSH1504AS150V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 203 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial
6.10. Size:1342K jiejie micro
jmsh1504ne.pdf
150V, 200A, 3.7m N-channel Power SGT MOSFETJMSH1504NEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.3 V Halogen-free; RoHS-compliantID(@VGS=10V) 200 ARDS(ON)_Typ(@VGS=10V 3.7 mWApplications Load Switch PWM Application Power ManagementDG STO
6.11. Size:286K jiejie micro
jmsh1504ae7.pdf
JMSH1504AE7150V 3.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V High Current Capability ID (@ VGS = 10V) (1) 205 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)3.8 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerm
6.12. Size:381K jiejie micro
jmsh1504atlq.pdf
JMSH1504ATLQ150V 3.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 227 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap
Datasheet: JMSH1504AC
, JMSH1504AE
, JMSH1504AE7
, JMSH1504AEQ
, JMSH1504AS
, JMSH1504ASQ
, JMSH1504ATL
, JMSH1504ATLQ
, 7N60
, JMSH1504NC
, JMSH1504NE
, JMSH1504NE7
, JMSH1504NS
, JMSH1504NTL
, JMSH1505ATL
, , .
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