JMSH1505ATL
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSH1505ATL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 150
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 159
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30
nS
Cossⓘ - Capacitancia
de salida: 535
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058
Ohm
Paquete / Cubierta:
TOLL
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JMSH1505ATL
Datasheet (PDF)
..1. Size:379K jiejie micro
jmsh1505atl.pdf 
JMSH1505ATL150V 4.6m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 159 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m Halogen-free and RoHS-compliantApplications Power Management in Compu
7.1. Size:285K jiejie micro
jmsh1506ae7.pdf
JMSH1506AE7150V 4.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V High Current Capability ID (@ VGS = 10V) (1) 181 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)4.9 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerm
7.2. Size:351K jiejie micro
jmsh1506asq.pdf
JMSH1506ASQ150V 5.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 174 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
7.3. Size:612K jiejie micro
jmsh1507aeq.pdf
JMSH1507AEQ150V 5.2mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 161 A RDS(ON)_Typ (@ VGS = 10V)5.2 mW Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.4. Size:292K jiejie micro
jmsh1509agq.pdf
JMSH1509AGQ150V 8.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 8.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.5. Size:305K jiejie micro
jmsh1506as.pdf
JMSH1506AS150V 5.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 157 A RDS(ON)_Typ (@ VGS = 10V)5.2 Pb-free Lead Plating m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial
7.6. Size:352K jiejie micro
jmsh1504ntl.pdf
JMSH1504NTL150V 3.3m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A RDS(ON)_Typ (@ VGS = 10V)3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industria
7.7. Size:1063K jiejie micro
jmsh1504ac jmsh1504ae.pdf
JMSH1504ACJMSH1504AE150V 3.9mW N-Ch Power MOSFETFeatures Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 192 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 3.9 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Ma
7.8. Size:292K jiejie micro
jmsh1504aeq.pdf
JMSH1504AEQ150V 3.9m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 210 A RDS(ON)_Typ (@ VGS = 10V)3.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application
7.9. Size:1290K jiejie micro
jmsh1509pe.pdf
150V,84A, 8.1m N-channel Power SGT MOSFETJMSH1509PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 84 ARDS(ON)_Typ(@VGS=10V 8.1 mWApplications Load Switch PWM Application Power ManagementDG STO-263
7.10. Size:351K jiejie micro
jmsh1504asq.pdf
JMSH1504ASQ150V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 230 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
7.11. Size:340K jiejie micro
jmsh1508aeq.pdf
JMSH1508AEQ150V 6.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
7.12. Size:1062K jiejie micro
jmsh1509ac jmsh1509ae.pdf
JMSH1509ACJMSH1509AE150V 9.0mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th) 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 9.0 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom
7.13. Size:1263K jiejie micro
jmsh1504nc.pdf
150V, 200A, 3.9m N-channel Power SGT MOSFETJMSH1504NCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 200 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.9 mWApplications Load Switch PWM Application Power Man
7.14. Size:1069K jiejie micro
jmsh1507ac jmsh1507ae.pdf
JMSH1507ACJMSH1507AE150V 5.2mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R Testedg ID (@ VGS = 10V) (1) 132 A RDS(ON)_Typ (@ VGS = 10V) 5.2 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indu
7.15. Size:350K jiejie micro
jmsh1504ns.pdf
JMSH1504NS150V 4.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 212 A RDS(ON)_Typ (@ VGS = 10V)4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial
7.16. Size:1184K jiejie micro
jmsh1504ne7.pdf
150V, 154A, 3.7m N-channel Power SGT MOSFETJMSH1504NE7Product SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 154 ARDS(ON)_Typ(@VGS=10V 3.7 mWApplications Load Switch PWM Application Power ManagementTO-263-7L S
7.17. Size:332K jiejie micro
jmsh1504atl.pdf
JMSH1504ATL150V 3.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.3 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indu
7.18. Size:1262K jiejie micro
jmsh1506mtl.pdf
150V, 176A, 3.9m N-channel Power SGT MOSFETJMSH1506MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 176 ARDS(ON)_Typ(@VGS=10V 3.9 mWApplications Load Switch PWM Application Power ManagementDG SP
7.19. Size:842K jiejie micro
jmsh1507pc jmsh1507pe.pdf
JMSH1507PCJMSH1507PE150V 5.0mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 133 A RDS(ON)_Typ (@ VGS = 10V) Halogen-free and RoHS-compliant 5.0 mWApplications Power Managerment in Telecom., Industrial Automation, CE
7.20. Size:1316K jiejie micro
jmsh1507ps.pdf
150V, 177A, 5.5m N-channel Power SGT MOSFETJMSH1507PSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 177 A Pb-free platingRDS(ON)_Typ(@VGS=10V 5.5 mWApplications Load Switch PWM Application Power Man
7.21. Size:1153K jiejie micro
jmsh1509pc.pdf
150V,84A, 8.1m N-channel Power SGT MOSFETJMSH1509PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 150 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 84 ARDS(ON)_Typ(@VGS=10V 8.1 Pb-free plating mWApplications Load Switch PWM Application Power Managem
7.22. Size:290K jiejie micro
jmsh1504as.pdf
JMSH1504AS150V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 203 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial
7.23. Size:1342K jiejie micro
jmsh1504ne.pdf
150V, 200A, 3.7m N-channel Power SGT MOSFETJMSH1504NEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.3 V Halogen-free; RoHS-compliantID(@VGS=10V) 200 ARDS(ON)_Typ(@VGS=10V 3.7 mWApplications Load Switch PWM Application Power ManagementDG STO
7.24. Size:286K jiejie micro
jmsh1504ae7.pdf
JMSH1504AE7150V 3.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)_Typ3.2 V High Current Capability ID (@ VGS = 10V) (1) 205 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)3.8 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerm
7.25. Size:381K jiejie micro
jmsh1504atlq.pdf
JMSH1504ATLQ150V 3.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 227 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap
7.26. Size:1240K jiejie micro
jmsh1509pg.pdf
150V, 88A, 9.1m N-channel Power SGT MOSFETJMSH1509PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 150 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 ARDS(ON)_Typ(@VGS=10V 9.1 mWApplications Load Switch PWM Application Power ManagementDG SPDFN
7.27. Size:386K jiejie micro
jmsh1504ctl.pdf
JMSH1504CTL150V 3.3m TOLL N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS150 V Low Gate Charge, Qg VGS(th)_Typ3.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.3 m Halogen-free and RoHS-compliantApplications Power Management in Compu
7.28. Size:290K jiejie micro
jmsh1509ag.pdf
JMSH1509AG150V 8.5m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS150 V Low Gate Charge VGS(th)3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 75 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)8.5 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Automation,
Otros transistores... JMSH1504ATL
, JMSH1504ATLQ
, JMSH1504CTL
, JMSH1504NC
, JMSH1504NE
, JMSH1504NE7
, JMSH1504NS
, JMSH1504NTL
, AON6380
, , , , , , , , .
History: JMSH1504AEQ
