JMSH1505ATL - Даташиты. Аналоги. Основные параметры
Наименование производителя: JMSH1505ATL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 375
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 159
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 30
ns
Cossⓘ - Выходная емкость: 535
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0058
Ohm
Тип корпуса:
TOLL
Аналог (замена) для JMSH1505ATL
JMSH1505ATL Datasheet (PDF)
..1. Size:379K jiejie micro
jmsh1505atl.pdf 
JMSH1505ATL 150V 4.6m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 159 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m Halogen-free and RoHS-compliant Applications Power Management in Compu
7.1. Size:285K jiejie micro
jmsh1506ae7.pdf 
JMSH1506AE7 150V 4.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 181 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 4.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerm
7.2. Size:351K jiejie micro
jmsh1506asq.pdf 
JMSH1506ASQ 150V 5.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 174 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
7.3. Size:612K jiejie micro
jmsh1507aeq.pdf 
JMSH1507AEQ 150V 5.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 161 A RDS(ON)_Typ (@ VGS = 10V) 5.2 mW Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.4. Size:292K jiejie micro
jmsh1509agq.pdf 
JMSH1509AGQ 150V 8.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 8.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.5. Size:305K jiejie micro
jmsh1506as.pdf 
JMSH1506AS 150V 5.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 157 A RDS(ON)_Typ (@ VGS = 10V) 5.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial
7.6. Size:352K jiejie micro
jmsh1504ntl.pdf 
JMSH1504NTL 150V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A RDS(ON)_Typ (@ VGS = 10V) 3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industria
7.7. Size:1063K jiejie micro
jmsh1504ac jmsh1504ae.pdf 
JMSH1504AC JMSH1504AE 150V 3.9mW N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 192 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 3.9 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Ma
7.8. Size:292K jiejie micro
jmsh1504aeq.pdf 
JMSH1504AEQ 150V 3.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 210 A RDS(ON)_Typ (@ VGS = 10V) 3.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application
7.9. Size:1290K jiejie micro
jmsh1509pe.pdf 
150V,84A, 8.1m N-channel Power SGT MOSFET JMSH1509PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 84 A RDS(ON)_Typ(@VGS=10V 8.1 mW Applications Load Switch PWM Application Power Management D G S TO-263
7.10. Size:351K jiejie micro
jmsh1504asq.pdf 
JMSH1504ASQ 150V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 230 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
7.11. Size:340K jiejie micro
jmsh1508aeq.pdf 
JMSH1508AEQ 150V 6.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2
7.12. Size:1062K jiejie micro
jmsh1509ac jmsh1509ae.pdf 
JMSH1509AC JMSH1509AE 150V 9.0mW N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th) 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 9.0 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom
7.13. Size:1263K jiejie micro
jmsh1504nc.pdf 
150V, 200A, 3.9m N-channel Power SGT MOSFET JMSH1504NC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 200 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.9 mW Applications Load Switch PWM Application Power Man
7.14. Size:1069K jiejie micro
jmsh1507ac jmsh1507ae.pdf 
JMSH1507AC JMSH1507AE 150V 5.2mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R Tested g ID (@ VGS = 10V) (1) 132 A RDS(ON)_Typ (@ VGS = 10V) 5.2 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu
7.15. Size:350K jiejie micro
jmsh1504ns.pdf 
JMSH1504NS 150V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 212 A RDS(ON)_Typ (@ VGS = 10V) 4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial
7.16. Size:1184K jiejie micro
jmsh1504ne7.pdf 
150V, 154A, 3.7m N-channel Power SGT MOSFET JMSH1504NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 154 A RDS(ON)_Typ(@VGS=10V 3.7 mW Applications Load Switch PWM Application Power Management TO-263-7L S
7.17. Size:332K jiejie micro
jmsh1504atl.pdf 
JMSH1504ATL 150V 3.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 263 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.3 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu
7.18. Size:1262K jiejie micro
jmsh1506mtl.pdf 
150V, 176A, 3.9m N-channel Power SGT MOSFET JMSH1506MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 176 A RDS(ON)_Typ(@VGS=10V 3.9 mW Applications Load Switch PWM Application Power Management D G S P
7.20. Size:1316K jiejie micro
jmsh1507ps.pdf 
150V, 177A, 5.5m N-channel Power SGT MOSFET JMSH1507PS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 177 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.5 mW Applications Load Switch PWM Application Power Man
7.21. Size:1153K jiejie micro
jmsh1509pc.pdf 
150V,84A, 8.1m N-channel Power SGT MOSFET JMSH1509PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 150 V 100% Vds TESTED VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 84 A RDS(ON)_Typ(@VGS=10V 8.1 Pb-free plating mW Applications Load Switch PWM Application Power Managem
7.22. Size:290K jiejie micro
jmsh1504as.pdf 
JMSH1504AS 150V 4.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 203 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial
7.23. Size:1342K jiejie micro
jmsh1504ne.pdf 
150V, 200A, 3.7m N-channel Power SGT MOSFET JMSH1504NE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.3 V Halogen-free; RoHS-compliant ID(@VGS=10V) 200 A RDS(ON)_Typ(@VGS=10V 3.7 mW Applications Load Switch PWM Application Power Management D G S TO
7.24. Size:286K jiejie micro
jmsh1504ae7.pdf 
JMSH1504AE7 150V 3.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th)_Typ 3.2 V High Current Capability ID (@ VGS = 10V) (1) 205 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V) 3.8 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerm
7.25. Size:381K jiejie micro
jmsh1504atlq.pdf 
JMSH1504ATLQ 150V 3.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.2 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 227 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap
7.26. Size:1240K jiejie micro
jmsh1509pg.pdf 
150V, 88A, 9.1m N-channel Power SGT MOSFET JMSH1509PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 150 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A RDS(ON)_Typ(@VGS=10V 9.1 mW Applications Load Switch PWM Application Power Management D G S PDFN
7.27. Size:386K jiejie micro
jmsh1504ctl.pdf 
JMSH1504CTL 150V 3.3m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 150 V Low Gate Charge, Qg VGS(th)_Typ 3.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.3 m Halogen-free and RoHS-compliant Applications Power Management in Compu
7.28. Size:290K jiejie micro
jmsh1509ag.pdf 
JMSH1509AG 150V 8.5m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 150 V Low Gate Charge VGS(th) 3.2 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 75 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 8.5 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation,
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History: DSG030N10N3
