JMSH0401MGQ
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSH0401MGQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 157
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 223
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29
nS
Cossⓘ - Capacitancia
de salida: 1979
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017
Ohm
Paquete / Cubierta:
PDFN5X6-8L
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JMSH0401MGQ
Datasheet (PDF)
..1. Size:1203K jiejie micro
jmsh0401mgq.pdf 
40V, 223A, 1.4m N-channel Power SGT MOSFETJMSH0401MGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 40 VVGS(th)_Typ 2.7 V 100% UIS TestedID(@VGS=10V) 223 A 100% Vds TestedRDS(ON)_Typ(@VGS=10V 1.4 mW Halogen-free; RoHS-compliant AEC-Q101 QualifiedApplications Load Switch PWM Applicat
6.1. Size:324K jiejie micro
jmsh0401cg.pdf
JMSH0401CG40V 1.1m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low RDS(ON)Parameter Value Unit VDS40 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communicat
6.2. Size:401K jiejie micro
jmsh0401agq.pdf
JMSH0401AGQ40V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
6.3. Size:1174K jiejie micro
jmsh0401pts.pdf
40V, 361A, 0.9m N-channel Power SGT MOSFETJMSH0401PTSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 361 ARDS(ON)_Typ(@VGS=10V 0.9 mWApplications Load Switch PWM Application Power ManagementDG SSch
6.5. Size:358K jiejie micro
jmsh0401atl.pdf
JMSH0401ATL40V 1.0m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ2.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 336 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.0 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE
6.6. Size:1208K jiejie micro
jmsh0401pg.pdf
40V, 211A, 0.8m N-channel Power SGT MOSFETJMSH0401PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 40 V 100% Vds TESTEDVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 211 A Pb-free platingRDS(ON)_Typ(@VGS=10V 0.8 mWApplications Load Switch PWM Application Power Manage
6.7. Size:1175K jiejie micro
jmsh0401ptsq.pdf
40V, 381A, 0.9m N-channel Power SGT MOSFETJMSH0401PTSQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.6 V 100% Vds TestedID(@VGS=10V) 381 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.9 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica
6.8. Size:625K jiejie micro
jmsh0401atlq.pdf
JMSH0401ATLQ40V 1.0mW TOLL N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 337 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
6.9. Size:562K jiejie micro
jmsh0401atsq.pdf
JMSH0401ATSQ40V 0.9mW sTOLL N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Standard Level Threshold, VGS(th) VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 352 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automoti
6.10. Size:402K jiejie micro
jmsh0401bgq.pdf
JMSH0401BGQ40V 0.90m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 276 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
6.11. Size:377K jiejie micro
jmsh0401ag.pdf
JMSH0401AG40V 1.3m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE
6.12. Size:1335K jiejie micro
jmsh0401pe.pdf
40V, 224A, 2.1m N-channel Power SGT MOSFETJMSH0401PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 224 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementDG SSche
6.14. Size:1193K jiejie micro
jmsh0401pgq.pdf
40V, 323A, 0.8m N-channel Power SGT MOSFETJMSH0401PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.7 V 100% Vds TestedID(@VGS=10V) 323 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.8 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica
Otros transistores... JMSH0401AGQ
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