DMG8822UTS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG8822UTS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.9 V
   Qgⓘ - Carga de la puerta: 9.6 nC
   Cossⓘ - Capacitancia de salida: 841 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TSSOP8

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DMG8822UTS Datasheet (PDF)

..1. Size:150K diodes
dmg8822uts.pdf

DMG8822UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

9.1. Size:225K diodes
dmg8880lk3.pdf

DMG8880LK3N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TO252-3L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagr

9.2. Size:144K diodes
dmg8880lss.pdf

DMG8880LSSN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See Diagram

9.3. Size:266K inchange semiconductor
dmg8880lk3.pdf

isc N-Channel MOSFET Transistor DMG8880LK3FEATURESDrain Current I = 16.5A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Otros transistores... DMG3414U , DMG3420U , DMG5802LFX , DMG6898LSD , DMG6968U , DMG6968UDM , DMG6968UTS , DMG8601UFG , 8205A , DMG9926UDM , DMG9926USD , DMN2004DMK , DMN2004DWK , DMN2004K , DMN2004TK , DMN2004VK , DMN2004WK .

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