DMN2004TK Todos los transistores

 

DMN2004TK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN2004TK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.54 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: SOT523
     - Selección de transistores por parámetros

 

DMN2004TK Datasheet (PDF)

 ..1. Size:184K  diodes
 dmn2004tk.pdf pdf_icon

DMN2004TK

DMN2004TKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte T

 7.1. Size:204K  diodes
 dmn2004vk.pdf pdf_icon

DMN2004TK

DMN2004VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termin

 7.2. Size:189K  diodes
 dmn2004k.pdf pdf_icon

DMN2004TK

DMN2004KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec

 7.3. Size:284K  diodes
 dmn2004dmk.pdf pdf_icon

DMN2004TK

DMN2004DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Term

MOSTRAR MÁS

Otros transistores... DMG6968UTS , DMG8601UFG , DMG8822UTS , DMG9926UDM , DMG9926USD , DMN2004DMK , DMN2004DWK , DMN2004K , STP65NF06 , DMN2004VK , DMN2004WK , DMN2005DLP4K , DMN2005K , DMN2005LP4K , DMN2005LPK , DMN2009LSS , DMN2016UTS .

History: 2SJ362 | PMN50UPE

 

 
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