DMN2004TK
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN2004TK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.54
A
Cossⓘ -
Output Capacitance: 150
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.55
Ohm
Package:
SOT523
DMN2004TK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN2004TK
Datasheet (PDF)
..1. Size:184K diodes
dmn2004tk.pdf
DMN2004TKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte T
7.1. Size:204K diodes
dmn2004vk.pdf
DMN2004VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Termin
7.2. Size:189K diodes
dmn2004k.pdf
DMN2004KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Low On-Resistance: RDS(ON) = 550(max)m @ VGS = 4.5V ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 0.55 @ VGS = 4.5V 630mA Fast Switching Speed 20V Low Input/Output Leakage 0.9 @ VGS = 1.8V 410mA ESD Protec
7.3. Size:284K diodes
dmn2004dmk.pdf
DMN2004DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Term
7.4. Size:278K diodes
dmn2004dwk.pdf
DMN2004DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Ter
7.5. Size:172K diodes
dmn2004wk.pdf
DMN2004WKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish
Datasheet: DMG6968UTS
, DMG8601UFG
, DMG8822UTS
, DMG9926UDM
, DMG9926USD
, DMN2004DMK
, DMN2004DWK
, DMN2004K
, IRF520
, DMN2004VK
, DMN2004WK
, DMN2005DLP4K
, DMN2005K
, DMN2005LP4K
, DMN2005LPK
, DMN2009LSS
, DMN2016UTS
.