JMSH0406BUQ
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSH0406BUQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 37
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 59
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16.3
nS
Cossⓘ - Capacitancia
de salida: 630
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006
Ohm
Paquete / Cubierta: PDFN3X3-8L
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JMSH0406BUQ
Datasheet (PDF)
..1. Size:386K jiejie micro
jmsh0406buq.pdf 
JMSH0406BUQ40V 4.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDF
6.1. Size:1235K jiejie micro
jmsh0406pu.pdf 
40V, 54A, 4.1m N-channel Power SGT MOSFETJMSH0406PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 54 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.1 mWApplications Load Switch PWM Application Power Managem
6.2. Size:305K jiejie micro
jmsh0406ak.pdf 
JMSH0406AK40V 5.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 70 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.0 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, I
6.3. Size:345K jiejie micro
jmsh0406ag.pdf 
JMSH0406AG40V 4.1m N-Ch Power MOSFETProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE
6.4. Size:1174K jiejie micro
jmsh0406pgdq.pdf 
40V, 51A, 5.1m Dual N-channel Power SGT MOSFETJMSH0406PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 51 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 5.1 mW AEC-Q101 QualifiedApplications Load Switch PWM Appli
6.5. Size:1236K jiejie micro
jmsh0406pg.pdf 
40V, 103A, 3.9m N-channel Power SGT MOSFETJMSH0406PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 103 ARDS(ON)_Typ(@VGS=10V 3.9 mWApplications Load Switch PWM Application Power ManagementDG SPDFN
6.6. Size:366K jiejie micro
jmsh0406au.pdf 
JMSH0406AU40V 4.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 58 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.3 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE
6.7. Size:1252K jiejie micro
jmsh0406pkq.pdf 
40V, 66A, 4.8m N-channel Power SGT MOSFETJMSH0406PKQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 66 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.8 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat
6.8. Size:1304K jiejie micro
jmsh0406pgd.pdf 
40V, 50A, 4.9m N-channel Power SGT MOSFETJMSH0406PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 50 ARDS(ON)_Typ(@VGS=10V 4.9 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L-DS
6.9. Size:1229K jiejie micro
jmsh0406pgq.pdf 
40V, 106A, 4.1m N-channel Power SGT MOSFETJMSH0406PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 106 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 QualifiedApplications Load Switch PWM Applica
6.10. Size:390K jiejie micro
jmsh0406agdq.pdf 
JMSH0406AGDQ40V 5.2m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicatio
6.11. Size:1236K jiejie micro
jmsh0406puq.pdf 
40V, 57A, 4.1m N-channel Power SGT MOSFETJMSH0406PUQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 2.8 V 100% Vds TestedID(@VGS=10V) 57 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Pb-free platingApplications Load Swit
6.12. Size:1129K jiejie micro
jmsh0406pk.pdf 
40V, 64A, 4.6m N-channel Power SGT MOSFETJMSH0406PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 64 ARDS(ON)_Typ(@VGS=10V 4.6 mWApplications Load Switch PWM Application Power ManagementDG STO-252-
6.13. Size:285K jiejie micro
jmsh0406agd.pdf 
JMSH0406AGD40V 5.2m Dual N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit Low Gate Charge, Qg VDS40 V VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE
6.14. Size:399K jiejie micro
jmsh0406agq.pdf 
JMSH0406AGQ40V 4.1m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.1 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications P
6.15. Size:358K jiejie micro
jmsh0406akq.pdf 
JMSH0406AKQ40V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 73 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications T
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