JMSH0406BUQ datasheet, аналоги, основные параметры
Наименование производителя: JMSH0406BUQ
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 59 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 16.3 ns
Cossⓘ - Выходная емкость: 630 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: PDFN3X3-8L
Аналог (замена) для JMSH0406BUQ
- подборⓘ MOSFET транзистора по параметрам
JMSH0406BUQ даташит
..1. Size:386K jiejie micro
jmsh0406buq.pdf 

JMSH0406BUQ 40V 4.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDF
6.1. Size:1235K jiejie micro
jmsh0406pu.pdf 

40V, 54A, 4.1m N-channel Power SGT MOSFET JMSH0406PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 54 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Managem
6.2. Size:305K jiejie micro
jmsh0406ak.pdf 

JMSH0406AK 40V 5.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 70 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.0 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, I
6.3. Size:345K jiejie micro
jmsh0406ag.pdf 

JMSH0406AG 40V 4.1m N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.1 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE
6.4. Size:1174K jiejie micro
jmsh0406pgdq.pdf 

40V, 51A, 5.1m Dual N-channel Power SGT MOSFET JMSH0406PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 51 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 5.1 mW AEC-Q101 Qualified Applications Load Switch PWM Appli
6.5. Size:1236K jiejie micro
jmsh0406pg.pdf 

40V, 103A, 3.9m N-channel Power SGT MOSFET JMSH0406PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 3.9 mW Applications Load Switch PWM Application Power Management D G S PDFN
6.6. Size:366K jiejie micro
jmsh0406au.pdf 

JMSH0406AU 40V 4.3m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 58 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.3 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE
6.7. Size:1252K jiejie micro
jmsh0406pkq.pdf 

40V, 66A, 4.8m N-channel Power SGT MOSFET JMSH0406PKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 66 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.8 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat
6.8. Size:1304K jiejie micro
jmsh0406pgd.pdf 

40V, 50A, 4.9m N-channel Power SGT MOSFET JMSH0406PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 50 A RDS(ON)_Typ(@VGS=10V 4.9 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L-D S
6.9. Size:1229K jiejie micro
jmsh0406pgq.pdf 

40V, 106A, 4.1m N-channel Power SGT MOSFET JMSH0406PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 106 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Applications Load Switch PWM Applica
6.10. Size:390K jiejie micro
jmsh0406agdq.pdf 

JMSH0406AGDQ 40V 5.2m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicatio
6.11. Size:1236K jiejie micro
jmsh0406puq.pdf 

40V, 57A, 4.1m N-channel Power SGT MOSFET JMSH0406PUQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 57 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Pb-free plating Applications Load Swit
6.12. Size:1129K jiejie micro
jmsh0406pk.pdf 

40V, 64A, 4.6m N-channel Power SGT MOSFET JMSH0406PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 64 A RDS(ON)_Typ(@VGS=10V 4.6 mW Applications Load Switch PWM Application Power Management D G S TO-252-
6.13. Size:285K jiejie micro
jmsh0406agd.pdf 

JMSH0406AGD 40V 5.2m Dual N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit Low Gate Charge, Qg VDS 40 V VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE
6.14. Size:399K jiejie micro
jmsh0406agq.pdf 

JMSH0406AGQ 40V 4.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.1 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications P
6.15. Size:358K jiejie micro
jmsh0406akq.pdf 

JMSH0406AKQ 40V 5.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 73 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications T
Другие IGBT... JMSH1010AK, JMSH1010AKQ, JMSH1010PC, JMSH1010PG, JMSH1010PK, JMSH1010PU, JMSH0406PU, JMSH0406PUQ, CS150N03A8, JMSL0401PG, JMSL0401PGQ, JMSL0402AG, JMSL0402AGQ, JMSL0402AK, JMSL0402AKQ, JMSL0402AU, JMSL0402BG