JMSL0402BG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL0402BG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 78 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8.7 nS
Cossⓘ - Capacitancia de salida: 1538 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Encapsulados: PDFN5X6-8L
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JMSL0402BG datasheet
6.2. Size:1192K jiejie micro
jmsl0402tg.pdf 
40V, 163A, 2.9m N-channel Power SGT MOSFET JMSL0402TG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 163 A RDS(ON)_Typ(@VGS=10V 1.9 mW Applications RDS(ON)_Typ(@VGS=4.5V 2.9 mW Load Switch PWM Application Pow
6.3. Size:306K jiejie micro
jmsl0402ak.pdf
JMSL0402AK 40V 1.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 150 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.8 m RDS(ON)_Typ (@ VGS = 4.5V) 2.2 m Halogen-free and RoHS-compliant Applications Power
6.4. Size:403K jiejie micro
jmsl0402agq.pdf
JMSL0402AGQ 40V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m RDS(ON)_Typ (@ VGS = 4.5V) 2.2 m Halogen-free and RoHS-compliant AEC-Q101 Q
6.6. Size:413K jiejie micro
jmsl0402akq.pdf
JMSL0402AKQ 40V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th) 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 211 A RDS(ON) (@ VGS = 10V) 1.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 2.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automot
6.7. Size:1191K jiejie micro
jmsl0402mgq.pdf
40V, 222A, 2.5m N-channel Power SGT MOSFET JMSL0402MGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 1.9 V 100% Vds Tested ID(@VGS=10V) 222 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 2.5 mW Applications
6.8. Size:1261K jiejie micro
jmsl0402mtl.pdf
40V, 367A, 1.04m N-channel Power SGT MOSFET JMSL0402MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 367 A RDS(ON)_Typ(@VGS=10V 0.97 mW Applications RDS(ON)_Typ(@VGS=4.5V 1.04 mW Load Switch PWM Application
6.9. Size:1260K jiejie micro
jmsl0402ptl.pdf
40V, 310A, 1.0m N-channel SGT MOSFET JMSL0402PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 310 A RDS(ON)_Typ(@VGS=10V 0.9 mW Applications RDS(ON)_Typ(@VGS=4.5V 1.0 mW Load Switch PWM Application Power Ma
6.10. Size:1190K jiejie micro
jmsl0402pg.pdf
40V, 233A, 1.5m N-channel SGT MOSFET JMSL0402PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.4 V Halogen-free; RoHS-compliant ID(@VGS=10V) 233 A RDS(ON)_Typ(@VGS=10V 1.3 mW Applications RDS(ON)_Typ(@VGS=4.5V 1.5 mW Load Switch PWM Application Power Man
Otros transistores... JMSH0406BUQ, JMSL0401PG, JMSL0401PGQ, JMSL0402AG, JMSL0402AGQ, JMSL0402AK, JMSL0402AKQ, JMSL0402AU, 4N60, JMSL0402BGQ, JMSL0402MGQ, JMSL0402MTL, JMSL0402PG, JMSL0402PTL, JMSL0402TG, JMTR3002A, JMTT8810KS
