JMSL0402BGQ
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL0402BGQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 40
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 158
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.7
nS
Cossⓘ - Capacitancia
de salida: 1538
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025
Ohm
Paquete / Cubierta:
PDFN5X6-8L
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JMSL0402BGQ
Datasheet (PDF)
6.2. Size:1192K jiejie micro
jmsl0402tg.pdf 
40V, 163A, 2.9m N-channel Power SGT MOSFETJMSL0402TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 163 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications RDS(ON)_Typ(@VGS=4.5V 2.9 mW Load Switch PWM Application Pow
6.3. Size:306K jiejie micro
jmsl0402ak.pdf
JMSL0402AK40V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 150 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power
6.4. Size:403K jiejie micro
jmsl0402agq.pdf
JMSL0402AGQ40V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliant AEC-Q101 Q
6.6. Size:413K jiejie micro
jmsl0402akq.pdf
JMSL0402AKQ40V 1.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 211 A RDS(ON) (@ VGS = 10V)1.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)2.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automot
6.7. Size:1191K jiejie micro
jmsl0402mgq.pdf
40V, 222A, 2.5m N-channel Power SGT MOSFETJMSL0402MGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 222 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 2.5 mWApplications
6.8. Size:1261K jiejie micro
jmsl0402mtl.pdf
40V, 367A, 1.04m N-channel Power SGT MOSFETJMSL0402MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 367 ARDS(ON)_Typ(@VGS=10V 0.97 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.04 mW Load Switch PWM Application
6.9. Size:1260K jiejie micro
jmsl0402ptl.pdf
40V, 310A, 1.0m N-channel SGT MOSFETJMSL0402PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 310 ARDS(ON)_Typ(@VGS=10V 0.9 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.0 mW Load Switch PWM Application Power Ma
6.10. Size:1190K jiejie micro
jmsl0402pg.pdf
40V, 233A, 1.5m N-channel SGT MOSFETJMSL0402PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 233 ARDS(ON)_Typ(@VGS=10V 1.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.5 mW Load Switch PWM Application Power Man
Otros transistores... JMSL0401PG
, JMSL0401PGQ
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, JMSL0402BG
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, JMSL0402MGQ
, JMSL0402MTL
, JMSL0402PG
, JMSL0402PTL
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