JMTQ3400D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

30V, 40A, 11.3m N-channel Power Trench MOSFETJMTQ3400DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.6 mWRDS(ON)_Typ(@VGS=4.5V 11.3 mWApplications Load Switch

JMTQ35N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,35A Load Switch R

60V, 35A, 14.3m N-channel Power Trench MOSFETJMTQ35N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 35 A Pb-free platingRDS(ON)_Typ(@VGS=10V 12.0 mWRDS(ON)_Typ(@VGS=4.5V 14.3 mWApplications Load Switch

JMTQ3010DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 22A Load SwitchRDS(ON)

30V, 61A, 5.4m N-channel Power Trench MOSFETJMTQ3005CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 61 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.3 mWRDS(ON)_Typ(@VGS=4.5V 5.4 mWApplications Load Switch PW

30V, 41A, 8.8m N-channel Power Trench MOSFETJMTQ3008AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 41 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=4.5V 8.8 mWApplications Load Switch PW

100V, 23A, 24.4m N-channel Power Trench MOSFETJMTQ320N10AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 23 ARDS(ON)_Typ(@VGS=10V 22.5 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 24.4 mWApplications Load Switch

JMTQ3005ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applicationsl 30V, 50A l Load Switch RDS(ON)

30V, 52A, 6.1m N-channel Power Trench MOSFETJMTQ3006CProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 52 A Pb-free platingRDS(ON)_Typ(@VGS=10V 4.3 mWRDS(ON)_Typ(@VGS=4.5V 6.1 mWApplications Load Switch PW

JMTQ380C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 6A Battery ProtectionR

JMTQ3003ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 80A Load SwitchRDS(ON)

JMTQ3006BDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 40A Load SwitchRDS(ON)