DMN2230U Todos los transistores

 

DMN2230U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN2230U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 188 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET DMN2230U

 

DMN2230U Datasheet (PDF)

 ..1. Size:155K  diodes
dmn2230u.pdf

DMN2230U
DMN2230U

DMN2230UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 110 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 145 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J

 ..2. Size:74K  tysemi
dmn2230u.pdf

DMN2230U
DMN2230U

Product specificationDMN2230UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 110 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 145 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 230 m @ VGS = 1.8V Terminal Connect

 9.1. Size:168K  diodes
dmn2215udm.pdf

DMN2230U
DMN2230U

DMN2215UDMDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 100m @VGS = 4.5V, ID = 2.5A Moisture Sensitivi

 9.2. Size:235K  diodes
dmn2250ufb.pdf

DMN2230U
DMN2230U

DMN2250UFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 0.17 @ VGS = 4.5V 1.35A Fast Switching Speed 20V 1.15A 0.23 @ VGS = 2.5V ESD Protected Gate 0.25 @ VGS = 1.8V 1.10A Totally Lead-Free & Fully RoH

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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